SI4100DY-T1-GE3 Verðlagning (USD) [150065stk lager]
- 1 pcs$0.24648
- 2,500 pcs$0.23145
- Hlutanúmer:
- SI4100DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 6.8A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - Zener - Stakur, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCR, Transistors - sérstök tilgangur and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4100DY-T1-GE3 electronic components. SI4100DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4100DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4100DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4100DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 6.8A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
63 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
600pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 6W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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