SI4590DY-T1-GE3 Verðlagning (USD) [227995stk lager]
- 1 pcs$0.16223
- 2,500 pcs$0.15266
- Hlutanúmer:
- SI4590DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P CHAN 100V SO8 DUAL.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Single and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4590DY-T1-GE3 electronic components. SI4590DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4590DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4590DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4590DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P CHAN 100V SO8 DUAL
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N and P-Channel
FET lögun :
-
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.4A, 2.8A
Rds On (Max) @ Id, Vgs :
57 mOhm @ 2A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
11.5nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
360pF @ 50V
Afl - Max :
2.4W, 3.4W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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