IXTF6N200P3 Verðlagning (USD) [4331stk lager]
- 1 pcs$10.00265
- Hlutanúmer:
- IXTF6N200P3
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCR, Díóða - leiðréttingar - stakir, Díóða - breytileg getu, Transistors - IGBTs - mát, Transistors - JFETs, Díóða - RF and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in IXYS IXTF6N200P3 electronic components. IXTF6N200P3 can be shipped within 24 hours after order. If you have any demands for IXTF6N200P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTF6N200P3 Vörueiginleikar
Hlutanúmer :
IXTF6N200P3
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH
Röð :
Polar™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
2000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.2 Ohm @ 3A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
143nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3700pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
215W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
ISOPLUS i4-PAC™
Pakki / mál :
ISOPLUSi5-Pak™
Nýjustu fréttir
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