SI9926CDY-T1-GE3 Verðlagning (USD) [226109stk lager]
- 1 pcs$0.16358
- 2,500 pcs$0.14319
- Hlutanúmer:
- SI9926CDY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 8A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Bríta leiðréttingar, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCRs - mát, Thyristors - SCR, Transistors - FETs, MOSFETs - RF and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI9926CDY-T1-GE3 electronic components. SI9926CDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI9926CDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI9926CDY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI9926CDY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 20V 8A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.3A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
33nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1200pF @ 10V
Afl - Max :
3.1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
Nýjustu fréttir
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