[2615stk lager]
- Hlutanúmer:
- GP1M006A065F
- Framleiðandi:
- Global Power Technologies Group
- Nákvæm lýsing:
- MOSFET N-CH 650V 5.5A TO220F.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu, Transistors - JFETs and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Global Power Technologies Group GP1M006A065F electronic components. GP1M006A065F can be shipped within 24 hours after order. If you have any demands for GP1M006A065F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M006A065F Vörueiginleikar
Hlutanúmer :
GP1M006A065F
Framleiðandi :
Global Power Technologies Group
Lýsing :
MOSFET N-CH 650V 5.5A TO220F
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 Ohm @ 2.75A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
1177pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
39W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220F
Pakki / mál :
TO-220-3 Full Pack
Nýjustu fréttir
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