SI3127DV-T1-GE3 Verðlagning (USD) [498195stk lager]
- 1 pcs$0.07424
- 3,000 pcs$0.07013
- Hlutanúmer:
- SI3127DV-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CHAN 60V TSOP6S.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - mát, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Díóða - Zener - Fylki, Thyristors - TRIACs and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI3127DV-T1-GE3 electronic components. SI3127DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3127DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3127DV-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI3127DV-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CHAN 60V TSOP6S
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.5A (Ta), 13A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
89 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
833pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
2W (Ta), 4.2W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-TSOP
Pakki / mál :
SOT-23-6 Thin, TSOT-23-6
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