Infineon Technologies - IPD90N10S406ATMA1

KEY Part #: K6419108

IPD90N10S406ATMA1 Verðlagning (USD) [91696stk lager]

  • 1 pcs$0.42642
  • 2,500 pcs$0.32467

Hlutanúmer:
IPD90N10S406ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH TO252-3.
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Hong Kong
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD90N10S406ATMA1 Vörueiginleikar

Hlutanúmer : IPD90N10S406ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH TO252-3
Röð : Automotive, AEC-Q101, OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 90A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 90A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 90µA
Hliðargjald (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 4870pF @ 25V
FET lögun : -
Dreifing orku (Max) : 136W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3-313
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63