Infineon Technologies - IPL60R299CPAUMA1

KEY Part #: K6418478

IPL60R299CPAUMA1 Verðlagning (USD) [64945stk lager]

  • 1 pcs$0.60206

Hlutanúmer:
IPL60R299CPAUMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 650V 11.1A 4VSON.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
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Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCR, Díóða - leiðréttingar - fylki, Díóða - RF, Díóða - Zener - Stakur, Transistors - sérstök tilgangur and Díóða - leiðréttingar - stakir ...
Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL60R299CPAUMA1 Vörueiginleikar

Hlutanúmer : IPL60R299CPAUMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 650V 11.1A 4VSON
Röð : CoolMOS™
Hluti staða : Not For New Designs
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 11.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 440µA
Hliðargjald (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1100pF @ 100V
FET lögun : -
Dreifing orku (Max) : 96W (Tc)
Vinnuhitastig : -40°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-VSON-4
Pakki / mál : 4-PowerTSFN

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