SISS70DN-T1-GE3 Verðlagning (USD) [145657stk lager]
- 1 pcs$0.25393
- Hlutanúmer:
- SISS70DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 125V.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - stakir, Transistors - IGBTs - Single, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - RF and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISS70DN-T1-GE3 electronic components. SISS70DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS70DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS70DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISS70DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 125V
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
125V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.5A (Ta), 31A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
29.8 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
15.3nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
535pF @ 62.5V
FET lögun :
-
Dreifing orku (Max) :
5.1W (Ta), 65.8W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S
Pakki / mál :
PowerPAK® 1212-8S
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