IXFP12N65X2 Verðlagning (USD) [41564stk lager]
- 1 pcs$0.94072
- Hlutanúmer:
- IXFP12N65X2
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Kerfisstjóratæki, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki, forspeglast, Smára - tvíhverfa (BJT) - fylki and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in IXYS IXFP12N65X2 electronic components. IXFP12N65X2 can be shipped within 24 hours after order. If you have any demands for IXFP12N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP12N65X2 Vörueiginleikar
Hlutanúmer :
IXFP12N65X2
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH
Röð :
HiPerFET™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
310 mOhm @ 6A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
18.5nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
1134pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
180W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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