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- Hlutanúmer:
- SQM110P04-04L-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 40V 120A TO263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - stakir and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQM110P04-04L-GE3 electronic components. SQM110P04-04L-GE3 can be shipped within 24 hours after order. If you have any demands for SQM110P04-04L-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM110P04-04L-GE3 Vörueiginleikar
Hlutanúmer :
SQM110P04-04L-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 40V 120A TO263
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
330nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
13980pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
375W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263 (D2Pak)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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