Infineon Technologies - IPP80R1K2P7XKSA1

KEY Part #: K6398230

IPP80R1K2P7XKSA1 Verðlagning (USD) [60727stk lager]

  • 1 pcs$0.69405
  • 10 pcs$0.61335
  • 100 pcs$0.48487
  • 500 pcs$0.37601
  • 1,000 pcs$0.28080

Hlutanúmer:
IPP80R1K2P7XKSA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 800V 4.5A TO220-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Díóða - RF, Transistors - IGBTs - Arrays, Díóða - breytileg getu, Thyristors - TRIACs, Thyristors - SCR and Thyristors - SCRs - mát ...
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We specialize in Infineon Technologies IPP80R1K2P7XKSA1 electronic components. IPP80R1K2P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP80R1K2P7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80R1K2P7XKSA1 Vörueiginleikar

Hlutanúmer : IPP80R1K2P7XKSA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 800V 4.5A TO220-3
Röð : CoolMOS™ P7
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 4.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 80µA
Hliðargjald (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 300pF @ 500V
FET lögun : -
Dreifing orku (Max) : 37W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : PG-TO220-3
Pakki / mál : TO-220-3

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