IXYS - IXFN50N120SK

KEY Part #: K6395234

IXFN50N120SK Verðlagning (USD) [1566stk lager]

  • 1 pcs$27.64233

Hlutanúmer:
IXFN50N120SK
Framleiðandi:
IXYS
Nákvæm lýsing:
MOSFET N-CH.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Forritanleg sameining ...
Samkeppnisforskot:
We specialize in IXYS IXFN50N120SK electronic components. IXFN50N120SK can be shipped within 24 hours after order. If you have any demands for IXFN50N120SK, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN50N120SK Vörueiginleikar

Hlutanúmer : IXFN50N120SK
Framleiðandi : IXYS
Lýsing : MOSFET N-CH
Röð : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : SiC (Silicon Carbide Junction Transistor)
Afrennsli að uppspennu (Vdss) : 1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 48A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 52 mOhm @ 40A, 20V
Vgs (th) (Max) @ kt : 2.8V @ 10mA
Hliðargjald (Qg) (Max) @ Vgs : 115nC @ 20V
Vgs (hámark) : +20V, -5V
Inntaksrýmd (Ciss) (Max) @ Vds : 1895pF @ 1000V
FET lögun : -
Dreifing orku (Max) : -
Vinnuhitastig : -40°C ~ 175°C (TJ)
Festingargerð : Chassis Mount
Birgir tæki pakki : SOT-227B
Pakki / mál : SOT-227-4, miniBLOC