BSZ0901NSIATMA1 Verðlagning (USD) [176341stk lager]
- 1 pcs$0.20975
- Hlutanúmer:
- BSZ0901NSIATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 40A TSDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - mát, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - DIACs, SIDACs and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSZ0901NSIATMA1 electronic components. BSZ0901NSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0901NSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0901NSIATMA1 Vörueiginleikar
Hlutanúmer :
BSZ0901NSIATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 40A TSDSON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
25A (Ta), 40A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2600pF @ 15V
FET lögun :
Schottky Diode (Body)
Dreifing orku (Max) :
2.1W (Ta), 69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TSDSON-8-FL
Pakki / mál :
8-PowerTDFN
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