SIS903DN-T1-GE3 Verðlagning (USD) [201147stk lager]
- 1 pcs$0.18388
- Hlutanúmer:
- SIS903DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET DUAL P-CHAN POWERPAK 1212.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, Transistors - Forritanleg sameining, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - Arrays, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIS903DN-T1-GE3 electronic components. SIS903DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS903DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS903DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIS903DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET DUAL P-CHAN POWERPAK 1212
Röð :
TrenchFET® Gen III
Hluti staða :
Active
FET gerð :
2 P-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
20.1 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
42nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2565pF @ 10V
Afl - Max :
2.6W (Ta), 23W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® 1212-8 Dual
Birgir tæki pakki :
PowerPAK® 1212-8 Dual
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