SIRA20DP-T1-RE3 Verðlagning (USD) [125329stk lager]
- 1 pcs$0.29512
- 3,000 pcs$0.27713
- Hlutanúmer:
- SIRA20DP-T1-RE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 25V POWERPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Thyristors - SCRs - mát and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIRA20DP-T1-RE3 electronic components. SIRA20DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIRA20DP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA20DP-T1-RE3 Vörueiginleikar
Hlutanúmer :
SIRA20DP-T1-RE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 25V POWERPAK SO-8
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
81.7A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.58 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (hámark) :
+16V, -12V
Inntaksrýmd (Ciss) (Max) @ Vds :
10850pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
6.25W (Ta), 104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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