Vishay Siliconix - SIHH21N60EF-T1-GE3

KEY Part #: K6417421

SIHH21N60EF-T1-GE3 Verðlagning (USD) [30657stk lager]

  • 1 pcs$1.35102
  • 3,000 pcs$1.34429

Hlutanúmer:
SIHH21N60EF-T1-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CHAN 600V 19A POWERPAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Single, Thyristors - TRIACs, Transistors - JFETs, Transistors - IGBTs - mát, Díóða - Bríta leiðréttingar and Transistors - FETs, MOSFETs - Single ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SIHH21N60EF-T1-GE3 electronic components. SIHH21N60EF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH21N60EF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH21N60EF-T1-GE3 Vörueiginleikar

Hlutanúmer : SIHH21N60EF-T1-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CHAN 600V 19A POWERPAK
Röð : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 19A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 185 mOhm @ 11A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 2035pF @ 100V
FET lögun : -
Dreifing orku (Max) : 174W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® 8 x 8
Pakki / mál : 8-PowerTDFN

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