Vishay Siliconix - SIHF35N60E-GE3

KEY Part #: K6399509

SIHF35N60E-GE3 Verðlagning (USD) [14454stk lager]

  • 1 pcs$2.85133
  • 10 pcs$2.54504
  • 100 pcs$2.08693
  • 500 pcs$1.68991
  • 1,000 pcs$1.42522

Hlutanúmer:
SIHF35N60E-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CHANNEL 600V 32A TO220.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Kerfisstjóratæki, Díóða - RF and Transistors - Tvíhverfur (BJT) - RF ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SIHF35N60E-GE3 electronic components. SIHF35N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHF35N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHF35N60E-GE3 Vörueiginleikar

Hlutanúmer : SIHF35N60E-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CHANNEL 600V 32A TO220
Röð : E
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 32A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 94 mOhm @ 17A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 132nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 2760pF @ 100V
FET lögun : -
Dreifing orku (Max) : 39W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-220 Full Pack
Pakki / mál : TO-220-3 Full Pack

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