[3277stk lager]
- Hlutanúmer:
- IXTD2N60P-1J
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 600.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXTD2N60P-1J electronic components. IXTD2N60P-1J can be shipped within 24 hours after order. If you have any demands for IXTD2N60P-1J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD2N60P-1J Vörueiginleikar
Hlutanúmer :
IXTD2N60P-1J
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 600
Röð :
PolarHV™
Hluti staða :
Last Time Buy
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.1 Ohm @ 1A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
240pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
56W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
Die
Pakki / mál :
Die
Nýjustu fréttir
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