IPD60N10S4L12ATMA1 Verðlagning (USD) [173756stk lager]
- 1 pcs$0.21287
- 2,500 pcs$0.19527
- Hlutanúmer:
- IPD60N10S4L12ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Díóða - leiðréttingar - fylki, Thyristors - SCR, Díóða - Zener - Stakur, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - stakir and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD60N10S4L12ATMA1 electronic components. IPD60N10S4L12ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60N10S4L12ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60N10S4L12ATMA1 Vörueiginleikar
Hlutanúmer :
IPD60N10S4L12ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH TO252-3
Röð :
Automotive, AEC-Q101, HEXFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
60A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 60A, 10V
Vgs (th) (Max) @ kt :
2.1V @ 46µA
Hliðargjald (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (hámark) :
±16V
Inntaksrýmd (Ciss) (Max) @ Vds :
3170pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
94W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3-313
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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