SI5513CDC-T1-GE3 Verðlagning (USD) [383787stk lager]
- 1 pcs$0.09638
- 3,000 pcs$0.09104
- Hlutanúmer:
- SI5513CDC-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 20V 4A 1206-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Arrays, Díóða - leiðréttingar - fylki, Díóða - RF and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI5513CDC-T1-GE3 electronic components. SI5513CDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5513CDC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5513CDC-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI5513CDC-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 20V 4A 1206-8
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A, 3.7A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4.2nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
285pF @ 10V
Afl - Max :
3.1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SMD, Flat Lead
Birgir tæki pakki :
1206-8 ChipFET™
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