BSC0502NSIATMA1 Verðlagning (USD) [172579stk lager]
- 1 pcs$0.21432
- 5,000 pcs$0.19661
- Hlutanúmer:
- BSC0502NSIATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 26A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Thyristors - SCR, Díóða - RF, Thyristors - SCRs - mát, Transistors - IGBTs - mát, Díóða - Zener - Fylki and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC0502NSIATMA1 electronic components. BSC0502NSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC0502NSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC0502NSIATMA1 Vörueiginleikar
Hlutanúmer :
BSC0502NSIATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 26A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
26A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1600pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 43W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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